| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device reducing wiring length of a data bus, while selectively buffering transmission data between a common data bus and a plurality of individual data. <P>SOLUTION: The semiconductor memory device includes: a memory cell array which is divided into a plurality of banks 0-7 and in which each bank is sectioned into two regions HBa, HBb; a common data bus BS0 connected to an input/output circuit part 12; a plurality of individual data buses BS1, BS2, BS3, and BS4 connected to I/Os of the regions HBa, HBb of each bank; a bidirectional buffer 10 connected to the common data bus BS0 and the individual data buses BS1, BS2, and a bidirectional buffer 11 connected to the common data bus BS0 and the individual data buses BS3, BS4. The bidirectional buffers 10, 11 buffer data transmitted bidirectionally between the common data bus BS0 and a data bus selected out of individual data buses BS1-BS4. <P>COPYRIGHT: (C)2009,JPO&INPIT |
