| 摘要 |
PROBLEM TO BE SOLVED: To provide a high breakdown voltage electronic device, and to provide an environment resistance electronic device. SOLUTION: A highly pure molybdenum oxide having a forbidden band width of 3.45 eV or more is used for an area where electrons travel in an electronic device such as a diode or a transistor. According to the invention, an electronic device having a high breakdown voltage characteristics and a high environment resistance characteristics is materialized. COPYRIGHT: (C)2009,JPO&INPIT
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