| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device capable of selectively producing a stress and storing in a channel region of a desired MIS transistor without affecting the element isolation region. SOLUTION: A stress distortion formation film 24 is formed and further a third resist pattern 25 is formed on a semiconductor substrate 11. Plasma treatment is carried out for the stress distortion formation film 24 using the third resist pattern 25 as a mask to reform the upper side portion of a first active region 11a in the stress distortion formation film 24 so that a tensile stress containing portion 24A is formed. Then, after removing the third resist pattern 25, heat treatment is carried out for the semiconductor substrate 11, and a tensile stress along the gate length direction is produced for the channel region located under the n-type gate electrode 15a in the first active region 11a by the tensile stress containing portion 24A. COPYRIGHT: (C)2009,JPO&INPIT
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