| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device which prevents the deterioration of sensitivity in a photodetector and which has a passivation film under a micro-lens. SOLUTION: A semiconductor device comprises a semiconductor substrate 100 having a photodetector 101, a silicon oxide film 102 formed on the semiconductor substrate, a plurality of wiring interlayer films 102 which are formed on the silicon oxide film and which contain a wiring layer 103 formed by embedding cooper therein, and silicon nitride films 106 and 110 which are formed on the wiring interlayer film 102a which is the uppermost layer and whose Si-H concentration are less than N-H concentration. COPYRIGHT: (C)2009,JPO&INPIT
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