| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing impurities from being diffused from an epitaxial layer to a semiconductor substrate and then improving element characteristics. SOLUTION: The semiconductor device 1a which includes a gate electrode 11 provided on the semiconductor substrate 3 and epitaxial layers 17 formed by epitaxially growing semiconductor materials at recessed portions (dug portions) 3a of the semiconductor substrate 3 at both sides of the gate electrode 11, and is provided with the epitaxial layers 17 as source/drain regions where impurities are diffused, is provided with insulating diffusion preventive layers 15 on sidewalls of the recessed portions 3a. Then the epitaxial layers 17 are joined to the semiconductor substrate 3 on bottom surfaces of the recessed portions 3a exposed from the diffusion preventive layers 15 and sidewall upper portions A of the recessed portions 3a. COPYRIGHT: (C)2009,JPO&INPIT
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