SPUTTERING TARGET USED FOR PRODUCTION OF REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY

摘要

To provide a sputtering target to be used for production of an EUV mask blank, capable of preventing particles by film peeling even when formation of a reflective multilayer film as a reflective layer and a Ru layer as a protective layer is carried out at a production level using actual machines for a large number of cycles. A sputtering target for forming a ruthenium (Ru) layer in a reflective layer for reflecting EUV light on a substrate, which contains Ru and at least one element selected from the group consisting of boron (B) and zirconium (Zr) in a total content of B and Zr of from 5 at % to 50 at %.