| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element enabling light emission having a large polarization ratio using a group-III nitride semiconductor with a nonpolar or semi-polar surface as a growth main surface. <P>SOLUTION: A light-emitting diode has an element body composed by growing a group-III nitride semiconductor layer 2 on a GaN single-crystal substrate 1 with an m surface as a main surface. The group-III nitride semiconductor layer 2 has a laminated structure by laminating an n-type contact layer 21, an n-type compressive stress application layer 22, a multiple quantum well layer 23 as a luminous layer, a GaN final barrier layer 24, a p-type electron rejection layer 25, and a p-type contact layer 26 in this order from the side of the GaN single-crystal substrate 1. The n-type compressive stress application layer 22 comprises a strain-free AlGaN layer. The multiple quantum well, GaN final barrier, p-type electron rejection, and p-type contact layers 23, 24, 25, 26 are subjected to epitaxial growth coherently to the n-type compressive stress application layer 22. <P>COPYRIGHT: (C)2009,JPO&INPIT |
