| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor thin film which has electric characteristics enhanced and also has variation in electric characteristic suppressed, a method of manufacturing a thin-film transistor, a semiconductor thin film, the thin-film transistor, and a display device. SOLUTION: Disclosed is the method of manufacturing the semiconductor thin film on a substrate, the manufacturing method including a crystallization step of forming a polycrystalline silicon film consisting of first crystal grains such that a ä101} plane is parallel to a film surface of an amorphous silicon film formed on the substrate and a <100> direction is parallel to a direction wherein crystallization energy is applied and second crystal grains such that a ä114} plane is parallel to the film surface and a <122> direction is parallel to the direction wherein the crystallization energy is applied by applying the crystallization energy to the amorphous silicon film in one direction in the film surface of the amorphous silicon film, and a crystal growing step of causing the first crystal grains to disappear and making the second crystal grains larger by applying crystallization energy to the polycrystalline silicon film. COPYRIGHT: (C)2009,JPO&INPIT
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