METHOD OF MANUFACTURING SILICON NITRIDE FILM, GAS BARRIER FILM AND THIN-FILM ELEMENT

摘要

PROBLEM TO BE SOLVED: To highly efficiently form a silicon nitride film having≤10-3g/m2/day moisture permeability and excellent film quality at not more than a heat resistant temperature of an organic layer. SOLUTION: The method of forming a silicon nitride film 1 is a method for forming the silicon nitride film 1 disposed in a reaction chamber 110 and having at least one organic layer by using a chemical vapor phase growth method employing plasma. The method includes a step of :supplying a material gas G containing SiH4, NH3, H2and He to the inside of the reaction chamber 110 so that the full gas pressure may become atmospheric pressure; a step of applying an electric field to an electrode 111 set on the upper part of the substrate 10 to generate an electric field P between the electrode 111 and the substrate 10, thereby bringing the material gas G between the electrode 111 and the substrate 10 into a plasma state; and a step of forming the silicon nitride film 1 on the substrate 10 at a temperature not more than the heat resistant temperature of the organic layer. In this case, the proportion of H2in the material gas G is≥13% and≤20%, and the proportion of NH3to SiH4is≥13% and≤24%. COPYRIGHT: (C)2009,JPO&INPIT