发明名称 |
Poly-crystalline thin film, thin film transistor formed from a poly-crystalline thin film and methods of manufacturing the same |
摘要 |
Example embodiments relate to a poly-crystalline silicon (Si) thin film, a thin film transistor (TFT) formed from a poly-crystalline silicon (Si) thin film and methods of manufacturing the same. The method of manufacturing the poly-crystalline Si thin film includes forming an active layer formed of amorphous Si on a substrate, coating a gold nanorod on the active layer, and irradiating infrared rays onto the gold nanorod to crystallize the active layer.
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申请公布号 |
US2009127560(A1) |
申请公布日期 |
2009.05.21 |
申请号 |
US20080219265 |
申请日期 |
2008.07.18 |
申请人 |
SAMSUNG ELECTRONICS., LTD. |
发明人 |
PARK KYUNG-BAE;YOON SEON-MI;LEE SANG-YOON;CHOI JAE-YOUNG;SHIN HYEON-JIN;RYU MYUNG-KWAN;KIM TAE-SANG;KWON JANG-YEON;SON KYUNG-SEOK;JUNG JI-SIM |
分类号 |
H01L29/786;H01L21/20;H01L21/336;H01L29/04 |
主分类号 |
H01L29/786 |
代理机构 |
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