发明名称 Poly-crystalline thin film, thin film transistor formed from a poly-crystalline thin film and methods of manufacturing the same
摘要 Example embodiments relate to a poly-crystalline silicon (Si) thin film, a thin film transistor (TFT) formed from a poly-crystalline silicon (Si) thin film and methods of manufacturing the same. The method of manufacturing the poly-crystalline Si thin film includes forming an active layer formed of amorphous Si on a substrate, coating a gold nanorod on the active layer, and irradiating infrared rays onto the gold nanorod to crystallize the active layer.
申请公布号 US2009127560(A1) 申请公布日期 2009.05.21
申请号 US20080219265 申请日期 2008.07.18
申请人 SAMSUNG ELECTRONICS., LTD. 发明人 PARK KYUNG-BAE;YOON SEON-MI;LEE SANG-YOON;CHOI JAE-YOUNG;SHIN HYEON-JIN;RYU MYUNG-KWAN;KIM TAE-SANG;KWON JANG-YEON;SON KYUNG-SEOK;JUNG JI-SIM
分类号 H01L29/786;H01L21/20;H01L21/336;H01L29/04 主分类号 H01L29/786
代理机构 代理人
主权项
地址