| 摘要 |
A gate structure in a semiconductor device includes a dielectric layer pattern on a substrate, a floating gate on the dielectric layer pattern, a gate mask on the floating gate, a tunnel insulation layer on the substrate, and a word line on the tunnel insulation layer. The dielectric layer pattern includes a first portion and a second portion having a thickness different from a thickness of the first portion. The floating gate includes a step and tips. The tunnel insulation layer makes contact with a sidewall of the floating gate. The word line extends on a portion of the gate mask.
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