发明名称 APPARATUS FOR PROCESSING SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent metallic contamination during process while assuring mechanical strength and cooling performance. SOLUTION: An adapter 60 provided to section between an outer tube 34 and an inner tube 35 is formed of silica glass, and O-rings 67 and 68 are contained in O-ring grooves 65 and 66 formed in the upper and lower surfaces of the adapter 60. Outer parts of the O-ring grooves 65 and 66 are formed of metal retainers 61 and 62 which are coupled thermally with a cooling water passage 53 via metal flanges 51 and 52. Since generation of metal contaminants from the adapter can be prevented by forming the adapter of silica glass, metallic contamination can be prevented during process. Since an O-ring can be cooled with sufficient thermal efficiency by bringing the O-ring into direct contact with a metal retainer, thermal impairment of the O-ring can be prevented. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009111025(A) 申请公布日期 2009.05.21
申请号 JP20070279337 申请日期 2007.10.26
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TANAKA AKINORI;SATO AKIHIRO;NISHIDO SHUHEI
分类号 H01L21/22;C23C16/44 主分类号 H01L21/22
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