发明名称 |
Transistor with a germanium-based channel encased by a gate electrode and method for producing one such transistor |
摘要 |
Source and drain electrodes are each formed by an alternation of first and second layers made from a germanium and silicon compound. The first layers have a germanium concentration comprised between 0% and 10% and the second layers have a germanium concentration comprised between 10% and 50%. At least one channel connects two second layers respectively of the source electrode and drain electrode. The method comprises etching of source and drain zones, connected by a narrow zone, in a stack of layers. Then superficial thermal oxidation of said stack is performed so a to oxidize the silicon of the germanium and silicon compound having a germanium concentration comprised between 10% and 50% and to condense the germanium Ge. The oxidized silicon of the narrow zone is removed and a gate dielectric and a gate are deposited on the condensed germanium of the narrow zone.
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申请公布号 |
US2009127584(A1) |
申请公布日期 |
2009.05.21 |
申请号 |
US20060920835 |
申请日期 |
2006.05.23 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE;STMICROELECTRONICS SA |
发明人 |
MORAND YVES;POIROUX THIERRY;VINET MAUD |
分类号 |
H01L29/80;H01L21/26 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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地址 |
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