发明名称 |
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME AND MASK PATTERN FOR MANUFACTURING THE SAME |
摘要 |
A semiconductor device includes: a semiconductor substrate; and an insulating layer formed on at least a main surface of the semiconductor substrate; wherein a contact hole is formed at the insulating layer so as to expose the main surface of the semiconductor substrate through the insulating layer so that a cross section of the contact hole parallel to the main surface of the semiconductor substrate is shaped rectangularly.
|
申请公布号 |
US2009127670(A1) |
申请公布日期 |
2009.05.21 |
申请号 |
US20080267881 |
申请日期 |
2008.11.10 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MATSUNAGA NAOKI |
分类号 |
H01L27/00;G03F7/004;H01L21/76 |
主分类号 |
H01L27/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|