发明名称 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME AND MASK PATTERN FOR MANUFACTURING THE SAME
摘要 A semiconductor device includes: a semiconductor substrate; and an insulating layer formed on at least a main surface of the semiconductor substrate; wherein a contact hole is formed at the insulating layer so as to expose the main surface of the semiconductor substrate through the insulating layer so that a cross section of the contact hole parallel to the main surface of the semiconductor substrate is shaped rectangularly.
申请公布号 US2009127670(A1) 申请公布日期 2009.05.21
申请号 US20080267881 申请日期 2008.11.10
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MATSUNAGA NAOKI
分类号 H01L27/00;G03F7/004;H01L21/76 主分类号 H01L27/00
代理机构 代理人
主权项
地址