发明名称 |
STRUCTURE OF VERY HIGH INSERTION LOSS OF THE SUBSTRATE NOISE DECOUPLING |
摘要 |
A structure includes a substrate comprising a region having a circuit or device which is sensitive to electrical noise. Additionally, the structure includes a first isolation structure extending through an entire thickness of the substrate and surrounding the region and a second isolation structure extending through the entire thickness of the substrate and surrounding the region.
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申请公布号 |
US2009127652(A1) |
申请公布日期 |
2009.05.21 |
申请号 |
US20070942811 |
申请日期 |
2007.11.20 |
申请人 |
DING HANYI;FENG KAI D;HE ZHONG-XIANG;LIU XUEFENG |
发明人 |
DING HANYI;FENG KAI D.;HE ZHONG-XIANG;LIU XUEFENG |
分类号 |
H01L23/552;H01L21/76 |
主分类号 |
H01L23/552 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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