发明名称 Process for Making a Semiconductor System
摘要 Multiple devices, including a first device and a second device, have operational circuitry and opposing first and second surfaces. First and second electrical contacts are formed at the first surface, while a third electrical contact is formed at the second surface opposite the first electrical contact. The first electrical contact is electrically connected to the operational circuitry, and the second electrical contact is electrically connected to the third electrical contact. The first device and the second device are subsequently stacked such that the first surface of the second device is located adjacent the second surface of the first device such that the first electrical contact of the second device is aligned with the third electrical contact of the first device. The first electrical contact of the second device is electrically connected to the third electrical contact of the first device.
申请公布号 US2009130798(A1) 申请公布日期 2009.05.21
申请号 US20090361513 申请日期 2009.01.28
申请人 发明人 WARE FREDERICK A.;TSERN ELY K.;SHAEFFER IAN P.
分类号 H01L21/50 主分类号 H01L21/50
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