| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide parts for manufacturing semiconductor which can maintain high performance and high reliability of the semiconductor. <P>SOLUTION: The parts are made by providing a substrate 1 comprised of silicon nitride crystal particles 3 and grain boundaries and composed of a silicon nitride sintered compact having a relative density of at least 98%, by removing the grain boundaries from the outer layer of the substrate 1 and providing a porous layer 5 having three-dimensionally connected silicon nitride crystal particles 3 on the substrate 1, wherein even when conveying silicon wafers laid on the porous layer 5, the silicon wafers do not contact with elements, for example rare earth elements, aluminium or the like, which would conventionally constitute grain boundaries, thereby the silicon wafers are not contaminated and the performance and the reliability of the semiconductor are not dameaged. <P>COPYRIGHT: (C)2009,JPO&INPIT |
