| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN substrate storing method for manufacturing a semiconductor device of good characteristics, to provide a stored substrate and a semiconductor device, and to provide a method of manufacturing the same. <P>SOLUTION: The GaN substrate storing method is provided in which the GaN substrate 1 is stored under an atmosphere where an oxygen concentration is 18 vol.% and/or a water vapor concentration is ≤12 g/m<SP>3</SP>, wherein surface roughness Ra of the first principal plane of the GaN substrate is set ≤20 nm, and surface roughness Ra of a second principal plane is set ≤20 μm, and wherein an off angle between the principal plane and the plane (0001) of the GaN substrate is ≥0.05° and ≤2° in a <1-100> direction, and ≥0° and ≤1° in a <11-20> direction. <P>COPYRIGHT: (C)2009,JPO&INPIT |
