| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve the property of a multiple beam laser diode element. <P>SOLUTION: A stress relaxation layer 30 comprising an Au-plated layer is formed on a p-type electrode 21 of a GaAs chip 4. The same stress relaxation layer 42 is provided on an element fixing portion 40 formed on a chip mounting surface of a sub-mount 9. Since the Young's modulus of Au constituting the stress relaxation layers 30 and 42 is lower than the Young's modulus of GaAs, residual stress resulting from the difference of linear expansion coefficients between the GaAs chip 4 and the sub-mount 9 is absorbed and eased by these stress relaxation layers 30 and 42. Since the residual stress of the GaAs chip 4 is reduced, the property change of a laser diode element is controlled. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
