| 摘要 |
PROBLEM TO BE SOLVED: To provide an integrated circuit, having a dual-damascene structure, and to provide a manufacturing process for forming the dual-damascene structure, while eliminating superfluous steps. SOLUTION: A process for forming the dual-damascene structure is provided. The process is for forming a stack including an insulator layer and a stop layer, having two masks formed on the stack. One of the masks is used for forming a via or a contact opening in the insulator layer, and the second mask is used for forming a recess for interconnection in the integrated circuit. COPYRIGHT: (C)2009,JPO&INPIT |
