| 摘要 |
The present invention provides an apparatus for producing a Group III nitride semiconductor, which enables production of a uniform Si-doped GaN crystal. In one embodiment of the invention, an apparatus for producing a Group III nitride semiconductor includes a supply tube for supplying nitrogen and silane, a Ga-supplying apparatus for supplying Ga melt to a crucible, and an Na-supplying apparatus for supplying Na melt to the crucible. Nitrogen and a dopant is mixed together, and the gas mixture is supplied through one single supply tube without provision of a conventionally employed supply tube for only supplying a dopant. Thus, dead space in a reaction vessel is reduced, and vaporization of Na is suppressed, whereby a high-quality, Si-doped GaN crystal can be produced.
|
