GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE AND SEMICONDUCTOR DEVICE

摘要

A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1x10-4 Omega.m and not more than 0.1 Omega.cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal is at least -30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal is at least -16% and not more than 16%.