| 摘要 |
PROBLEM TO BE SOLVED: To provide a pressure sensor and a manufacturing method thereof, capable of reducing deterioration of withstand pressure due to stress concentration. SOLUTION: This manufacturing method of the pressure sensor equipped with an insulating layer 2 provided between a first semiconductor layer 1 and a second semiconductor layer 3 forming a diaphragm 4 includes a process to etch the first semiconductor layer 1 in a section forming a pressure sensitive region with the insulating layer 2 used as an etching stopper, a process to etch the insulating layer 2 in the section forming the pressure sensitive region, a process to form a protective film 7 on the side wall of the first semiconductor layer 1, and a process to form the diaphragm 4 by etching the second semiconductor layer 3 in the section forming the pressure sensitive region after forming the protective layer 7. COPYRIGHT: (C)2009,JPO&INPIT |
