| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a negative photosensitive resin composition for forming a thin film pattern having low residual stress and strong tenacity (high elongation) used for insulating material of an electronic part and a passivation film, a buffer coat film, an interlayer insulation film and α-ray shield film in a semiconductor device. <P>SOLUTION: This negative photosensitive resin composition contains (B) 0.5-20 mass parts compound generating acid by radiation exposure and (C) 3-40 mass parts compound, which crosslinks (A) copolymer by action of acid to 100 mass parts polyamide copolymer expressed by the chemical formula (1). In the chemical formula (1), X<SB>1</SB>, X<SB>2</SB>and Y<SB>1</SB>are groups respectively having bivalent aromatic group selected independently, and they may be the same or different from each other. Y<SB>2</SB>is a group including a tetravalent aromatic group. R<SB>1</SB>and R<SB>2</SB>are hydroxyl groups or univalent organic groups, and they may be the same or different from each other. Bonding indicated by two arrows indicate replaceable bonding or reverse bonding. (a) and (b) indicates percentage of each structural unit, a: 10-90%, b: 10-90%, and a+b=100%. <P>COPYRIGHT: (C)2009,JPO&INPIT |
