| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a large-area light-emitting source which is improved in the light extraction efficiency and is applicable to lighting. <P>SOLUTION: The integrated light-emitting source has a plurality of light-emitting devices arrayed on a main support. At least one of the plurality of light-emitting devices has a plurality of light-emitting units, each comprising a compound semiconductor thin-film crystal layer, having a first conductivity-type semiconductor layer including a first conductivity-type clad layer, an active layer structure; and a second conductivity-type semiconductor layer, having a second conductivity-type clad layer, in this order; a second conductivity-type side electrode, and a first conductivity-type side electrode as a unit, and compound semiconductor thin-film crystal layers in the plurality of light-emitting units are formed in the same process. <P>COPYRIGHT: (C)2009,JPO&INPIT |
