MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE WITH PENETRATING ELECTRODE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE WITH PENETRATING ELECTRODE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor substrate with a penetrating electrode capable of efficiently forming a penetrating electrode on the semiconductor substrate having a device and wiring already formed thereon; and a manufacturing method of a semiconductor device with a penetrating electrode. SOLUTION: In the manufacturing method of a semiconductor substrate with a penetrating electrode, first silicon oxide films 12 are formed on principal surfaces of a semiconductor substrate 11; a pore 13 reaching the first silicon oxide film 12 on one-side principal surface side from the principal surface A is formed; a second silicon oxide film 14 is formed on a hole wall of the pore 13; a first metal thin film 15 and a second metal thin film 16 are formed on the first silicon oxide film 12; the first silicon oxide film 12 at an end of the pore 13 is removed; and the penetrating electrode 17 is formed by filling a conductive substance in the pore 13. The pore 13 is formed by a DRIE method. The conductive substance is filled in the pore 13 by a molten metal suction method or a print method. COPYRIGHT: (C)2009,JPO&INPIT