| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical vapor deposition apparatus for performing a high temperature medium CVD method, which is improved in running cost and productivity. SOLUTION: In the chemical vapor deposition apparatus, the product generated when the gaseous raw material introduced from a gas introducing head 31 inside a treatment chamber of a reduced pressure state comes into contact with the surface of a high-temperature medium 4 maintained at a prescribed high temperature by an energy application mechanism 4 or passes near the surface, comes at the surface of the substrate 9 held by a substrate holder to form a thin film, wherein the gas introducing head 31 is arranged along the high-temperature medium 4, and thereby the use efficiency of the gaseous raw material is improved. COPYRIGHT: (C)2009,JPO&INPIT
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