发明名称 |
Structure for SRAM voltage control for improved operational margins |
摘要 |
A design structure including a static random access memory ("SRAM") is provided which includes a plurality of SRAM cells arranged in an array. The array includes a plurality of rows and a plurality of columns. The SRAM includes voltage control circuits corresponding to respective ones of the plurality of columns of the array, each coupled to an output of a power supply. Each voltage control circuit temporarily reduces a voltage provided to power supply inputs of a plurality of SRAM cells that belong to a selected column of columns of the SRAM. The power supply voltage to the selected column is reduced during a write operation in which a bit is written to one of the SRAM cells belonging to the selected column.
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申请公布号 |
US2009129191(A1) |
申请公布日期 |
2009.05.21 |
申请号 |
US20070985961 |
申请日期 |
2007.11.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ELLIS WAYNE F.;MANN RANDY W.;WAGER DAVID J.;WONG ROBERT C. |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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