| 摘要 |
A semiconductor storage device includes a memory array compartmentalized into first and second regions alternately arranged. The second regions are formed by odd and even columns alternately arranged. The semiconductor storage device includes: a memory mat array arranged in each first region; a sense amp array arranged in each second region; local IO lines arranged in each second region and connected to the sense amp array; main IO lines crossing the first and second regions; and a read/write amplifier arranged in each second region and at an intersection region where the local IO lines cross the main IO lines. The read/write amplifier in an odd column is connected to a local IO line therein and to a local IO line in the next odd column. The read/write amplifier in an even column is connected to a local 10 line therein and to a local IO line in the next even column.
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