| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device where a hole failure is hard to occur in a plated electrode layer on a main surface side or in a base metal layer in any of an IGBT area and a diode cell area, and which can sufficiently ensure adhesion strength and electrical characteristics. <P>SOLUTION: A vertical IGBT 100i and a diode 100d are formed on the same semiconductor substrate 10, a base metal layer 18 which are commonly connected to the emitter area of the IGBT 100i and the anode area of the diode 100d is formed on the main surface of the semiconductor substrate 10, and a plated electrode layer 25 is formed on the base metal layer 18. In such a semiconductor device 100, a specified projecting pattern 17a formed of an oxide film is formed on the semiconductor substrate 10 on the main side in a diode cell area, and the base metal layer 18 is stacked on the projecting pattern 17a. <P>COPYRIGHT: (C)2009,JPO&INPIT |
