| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a transparent conductive film for a photoelectric conversion device, wherein low sheet resistance and large ruggedness are made compatible without increasing the film thickness of the transparent conductive film. <P>SOLUTION: The transparent conductive film is for the photoelectric conversion device disposed on a base layer, and the transparent conductive film comprises a zinc oxide containing at least 2×10<SP>19</SP>pieces/cm3 of B atoms and at least 2×10<SP>20</SP>pieces/cm3 of H atoms, respectively as the maximum value of the atom concentration measured by an SIMS. In the transparent conductive film, the H atom concentration, at a prescribed position from an interface on the side far from the base layer is lower than the H atom concentration, at a prescribed position from an interface on the side of the base layer. Also, in the transparent conductive film, the B atom concentration, at a prescribed position from the interface on the side far from the base layer is lower than the B atom concentration, at a prescribed position from the interface on the side of the base layer. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
