| 摘要 |
<P>PROBLEM TO BE SOLVED: To secure high treatment uniformity even if a wafer is rotated at high speed. <P>SOLUTION: Antennas 401a, 401b composed of flat surface coils are provided at upper and lower sides of a treatment chamber 200. A support 502 for supporting a wafer 500 is constituted to be freely carried in/out to/from the treatment chamber 200, and a magnetic material 503 is provided in the support 502. Electromagnets 301a to 301x and magnetic field coils 302a, 302b are arranged concentrically at the upper and lower sides of the treatment chamber 200. The support loading the wafer is carried into the treatment chamber. The support is made afloat by applying magnetic forces by means of the electromagnets. The wafer is heated by induction heating to the magnetic material through the lower antenna. The support is rotated by continuously changing polarities of the electromagnets periodically and in the direction of the circumferential row. Inductive plasma is excited by applying high-frequency power to the upper antenna. Surface treatment is performed on the rotating wafer using reactant particles that are highly activated. <P>COPYRIGHT: (C)2009,JPO&INPIT |
