| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser diode epitaxial wafer wherein p-type carrier concentration in a p-type AlGaInP cladding layer is uniform and diffusion of p-type impurities is reduced. SOLUTION: In this laser diode epitaxial wafer having a double-hetero structure formed by laminating an n-type cladding layer 2 made of at least an AlGaInP based material, an active layer 3, and the p-type cladding layer one by one, the P-type impurity in the p-type cladding layer 4 made of the AlGaInP based material is carbon, and carrier concentration in the p-type cladding layer 4 is within a range of 8.0×10<SP>17</SP>to 1.5×10<SP>18</SP>cm<SP>-3</SP>. COPYRIGHT: (C)2009,JPO&INPIT
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