发明名称 TARGET DEVICE AND MAGNETRON SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To enhance the efficiency of forming a film with a sputtering method. SOLUTION: This target device has a cylindrical support pipe of which the outer periphery forms a target layer, and a magnet unit 24 is arranged in the hollow center. The magnet unit 24 has a first pole face which is formed of N poles of respective magnets 24b and is arranged in a zig-zag form, and a second pole face which is formed of S poles of respective magnets 24c and is arranged so as to surround the perimeter of the first pole face. Thus, the direction of a magnetic field generated in the vicinity of the surface of the target layer inclines with respect to the direction of its generating line, so that the number of magnetic lines of force with respect to the length in the direction of the generating line of the target layer 27 is increased, which expands the distribution of the magnetic field in the vicinity of the surface of the target layer. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009108383(A) 申请公布日期 2009.05.21
申请号 JP20070283474 申请日期 2007.10.31
申请人 RAIKU:KK;EBARA UDYLITE KK 发明人 NANBU NOBUMASA;YOSHIOKA JUNICHIRO;HORIE KUNIAKI
分类号 C23C14/35;C23C14/34 主分类号 C23C14/35
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