发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method of fabricating a semiconductor device includes first providing an insulation substrate. A patterned conductive layer is formed over the insulation substrate, and the patterned conductive layer includes a channel region and a number of protruding regions. A gate structure layer is formed over the insulation substrate. The gate structure layer covers a part of the patterned conductive layer, and each of the protruding regions has an exposed region. A doping process is performed to dope at least the exposed region of the patterned conductive layer to form a number of S/D regions.
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申请公布号 |
US2009130804(A1) |
申请公布日期 |
2009.05.21 |
申请号 |
US20090353236 |
申请日期 |
2009.01.13 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
TSENG HUAI-YUAN;KUNG CHEN-PANG;LIN HORNG-CHIH;LEE MING-HSIEN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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