| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device facilitating circuit designing and preventing read error. <P>SOLUTION: The nonvolatile semiconductor memory device 10 includes a first power pad 1 to which first power is supplied, a second power pad 2 to which second power is supplied, a first power line 3 electrically connected to the first power pad 1, a second power line 4 electrically connected to the second power pad 2, a plurality of memory cells MC electrically connected between the first and second power lines 3 and 4 and each having a plurality of threshold voltages, and a reference cell RC electrically connected between the first and second power lines 3 and 4 and used for distinguishing ON memory cells from OFF memory cells. The reference cell RC is disposed at the tail end of the first and second power lines 3 and 4. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
