| 摘要 |
PROBLEM TO BE SOLVED: To provide electrode placement which applies easy heat dispersion of a semiconductor device with high power density and high exothermic density. SOLUTION: The semiconductor device includes: a gate electrode 24, a source electrode 20, and a drain electrode 22 which are placed on a first surface of a substrate 10, and have a plurality of fingers, respectively; gate terminal electrodes G1-G4, source terminal electrodes S1-S5, and a drain terminal electrode D which are placed on the first surface, and governs a plurality of fingers, respectively every the gate electrode, the source electrode, and the drain electrode; active areas AA1-AA5 placed on the substrate 10 of the lower part of the gate electrode 24, the source electrode 20, and the drain electrode 22; a non-active area (BA) adjoining the active areas and placed on the substrate 10; and VIA holes SC1-SC5 connected to the source terminal electrodes, wherein the active areas are divided into a plurality of stripe shapes, and the fishbone placement of the gate electrode 24 is performed. COPYRIGHT: (C)2009,JPO&INPIT
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