| 摘要 |
The invention is directed to a method for patterning a material layer. The method comprises steps of forming a first mask layer on the material layer and then patterning the first mask layer. The patterned first mask layer has a pattern therein and a plurality of gaps within the patterns and the gaps expose a portion of the material layer. Further, a second mask layer is formed over the material layer and the second mask layer fills the gaps. An interface layer is formed between the patterned first mask layer and the second mask layer. A portion of the second material layer is removed until the top surface of the interface layer is exposed. The interface layer is removed to expose a portion of the material layer and the material layer is patterned by using the patterned first mask layer and the second mask layer as a mask.
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