| 摘要 |
This disclosure concerns a memory including transistors provided on a substrate; ferroelectric capacitors provided on the transistors, the ferroelectric capacitors respectively including a ferroelectric film provided between a lower electrode and an upper electrode; and a barrier film covering a first side surface of the ferroelectric capacitor, and blocking passing of hydrogen, wherein adjacent two of the ferroelectric capacitors connected in the lower electrode form one capacitor unit, a plurality of the capacitor units connected in the upper electrode form one capacitor chain, the capacitor units are arranged with a deviation of a half pitch of the capacitor unit in adjacent plurality of capacitor chains, and when D1 is a distance between the adjacent ferroelectric capacitors within the capacitor unit, D2 is a distance between the adjacent capacitor chains, and D3 is a distance between the adjacent capacitor units within the capacitor chain, D3 is larger than D1 and D2.
|
