| 发明名称 |
MAGNETIC MEMORY CELL BASED ON A MAGNETIC TUNNEL JUNCTION(MTJ) WITH LOW SWITCHING FIELD SHAPES |
| 摘要 |
Embodiments of the invention magnetic memory device, comprising: a magnetic tunnel junction (MTJ) which includes a Magnetic Tunnel Junction (MTJ) stack which has one of a crescent-shaped profile and an elbow-shaped profile in cross-section.
|
| 申请公布号 |
US2009128966(A1) |
申请公布日期 |
2009.05.21 |
| 申请号 |
US20080249897 |
申请日期 |
2008.10.10 |
| 申请人 |
MANI KRISHNAKUMAR;WILSON JANNIER MAXIMO ROIZ |
发明人 |
MANI KRISHNAKUMAR;WILSON JANNIER MAXIMO ROIZ |
| 分类号 |
G11B5/33 |
主分类号 |
G11B5/33 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
