Method of manufacturing a capacitor and memory device including the same

摘要

In a capacitor of a semiconductor device, a method of manufacturing the same and a memory device including the capacitor, the capacitor includes a lower electrode, a dielectric film on the lower electrode, an upper electrode on the dielectric film, and a first reaction barrier film for preventing a reaction between the lower electrode and the dielectric film, the first reaction barrier film being interposed between the lower electrode and the dielectric film.