METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which reduces a lead-out pattern region of wiring.

SOLUTION: The method includes steps of: performing exposure using a first photomask that has a pattern sequence where a hole pattern 12 enclosed by a light shielding portion or a translucent film and an auxiliary pattern 13 not to be transferred onto the semiconductor substrate are arranged at constant intervals, and the pitch between the hole pattern 12 and the auxiliary pattern 13 is a first pitch Pholecalculated in terms of a dimension on the semiconductor substrate; and performing exposure by using a second photomask that has a pattern sequence where wiring patterns 9 enclosed by the light shielding portion or the translucent film are arranged at constant intervals, and the pitch between the wiring patterns 9 is a second pitch Plinecalculated in terms of a dimension on the semiconductor substrate. A value obtained by multiplying the second pitch Plineby an integer m is equal to a value obtained by multiplying the first pitch Pholeby an integer n, and the integer m is larger than the integer n.

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