METHOD AND DEVICE OF LOW-ENERGY ELECTRON ACCELERATION ETCHING AND CLEANING OF SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of low-damage, anisotropic etching and cleaning of a substrate including a step of mounting the substrate upon a mechanical support part arranged within a positive column of a plasma discharge generated by either an ac or dc plasma reactor.

SOLUTION: The mechanical support part 12 is independent of the plasma reactor and capable of being electrically biased. The substrate is subjected to the positive column 15 of a plasma of low-energy electrons, that is, an electrical neutral part and a species reactive with the substrate. An additional structure 14 capable of being electrically biased can be arranged within the plasma to further adjust the extraction or retardation of particles from the plasma.

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