| 摘要 |
PROBLEM TO BE SOLVED: To simply form a multiplex tunnel structure having high quality with less thickness variations. SOLUTION: The method of manufacturing a semiconductor device includes a step of forming a first tunnel insulating film 102, having an energy level capable of passing through by tunneling of conduction carriers, on a principal surface of a semiconductor substrate 101, a step of forming a first semi-insulating semiconductor film 103, having an energy level lower than that of the first tunnel insulating film 102, on the first tunnel insulating film 102, a step of forming a first conductive film 204 containing nitrogen on the first semi-insulating semiconductor film 103, and a step of annealing. COPYRIGHT: (C)2009,JPO&INPIT
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