SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To prevent the occurrence of a leakage current in a semiconductor device having a silicide film at the upper part of a heavily doped layer. SOLUTION: A first MOS transistor has a first heavily doped layer 306a formed below the outer side part of a first sidewall spacer 305a in an active region 300x and a first silicide film 311a formed at the upper part of the first heavily doped layer 306a. A second MOS transistor has a second heavily doped layer 306b formed below the outer side part of a second sidewall spacer 305b in the active region 300x and a second silicide film 311b formed at the upper part of the second heavily doped layer 306b. The crystal grain diameter of crystal grains constituting the first silicide film 311a and the second silicide film 311b is equal to or less than an interval between the first sidewall spacer 305a and the second sidewall spacer 305b. COPYRIGHT: (C)2009,JPO&INPIT