发明名称 SURFACE-EMITTING SEMICONDUCTOR LASER ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser element using a photonic crystal structure and capable of efficiently outputting a laser beam. SOLUTION: The surface-emitting semiconductor laser element 10 comprises: a substrate 12; an active layer 16 provided on the main surface 12a of the substrate 12; a photonic crystal layer 20 optically coupled with the active layer 16; a beam output plane S for outputting a laser beam generated by the semiconductor laser element 10; and an electrode 28 provided on the beam output plane S. The photonic crystal layer 20 has a two-dimensional photonic crystal structure for partially diffracting the beam having the predetermined wavelength included in the beam generated by the active layer to the beam output plane side and confining the other part of the beam having the predetermined wavelength to the plane in approximately parallel with the main surface. The predetermined wavelength is the wavelength of the laser beam, the electrode has at least one edge part 28a, 28b, and phase shift parts 36x, 36y are formed under vicinity of the edge part of the photonic crystal layer. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009111167(A) 申请公布日期 2009.05.21
申请号 JP20070282039 申请日期 2007.10.30
申请人 SUMITOMO ELECTRIC IND LTD 发明人 FURUKAWA MASAHITO;MATSUBARA HIDEKI
分类号 H01S5/18 主分类号 H01S5/18
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