| 摘要 |
<p>A method of fabricating a semiconductor device is provided. A contact hole with a finer width can be formed by solving an exposure limit of KrF exposure apparatuses. The fabrication method includes forming a first insulation layer on a substrate; forming a photoresist pattern on the first insulation layer; forming a second insulation layer covering the photoresist pattern; forming a second insulation layer spacer in a sidewall of the photoresist pattern by etching the second insulation layer; forming a contact hole by etching the first insulation layer using the photoresist pattern and the second insulation layer spacer as a mask; removing the photoresist pattern; and removing the second insulation layer spacer. A contact hole with a finer width can be formed using a KrF exposure apparatus, and furthermore, contact resistance can be lowered and device characteristics can be improved</p> |
