Vcsel system with transverse p/n junction

摘要

The present invention provides a VCSEL system (100) comprising forming a first mirror (102), forming a vertical cavity on the first mirror, the vertical cavity including integrated multiple gain regions (108) and forming a transverse p/n junction laterally to the integrated multiple gain regions (108), wherein forward biasing the transverse p/n junction causes photon emission in the integrated multiple gain regions (108).