发明名称 |
SHIELDED GATE TRENCH(SGT) MOSFET CELLS IMPLEMENTED WITH A SCHOTTKY SOURCE CONTACT |
摘要 |
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one active cell further includes a trenched source contact opened between the trenches wherein the trenched source contact opened through a source region into a body region for electrically connecting the source region to a source metal disposed on top of an insulation layer wherein a trench bottom surface of the trenched source contact further covered with a conductive material to function as an integrated Schottky barrier diode in said active cell. A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode. |
申请公布号 |
EP1999792(A4) |
申请公布日期 |
2009.05.20 |
申请号 |
EP20070752836 |
申请日期 |
2007.03.10 |
申请人 |
ALPHA & OMEGA SEMICONDUCTOR LIMITED |
发明人 |
BHALLA, ANUP;LUI, SIK, K. |
分类号 |
H01L29/78;H01L21/336;H01L29/06;H01L29/10;H01L29/40;H01L29/417 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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