发明名称 FILM FORMING CONDITION SETTING METHOD, PHOTOELECTRIC CONVERTER, AND MANUFACTURING METHOD, MANUFACTURING APPARATUS AND INSPECTION METHOD FOR THE SAME
摘要 <p>A photovoltaic device having a high conversion efficiency is produced in a stable manner. The conditions for film deposition of a microcrystalline silicon photovoltaic layer (4) in a photovoltaic device are set based on the Raman peak ratio within a Raman spectrum obtained at the substrate (1) side of the microcrystalline silicon layer (4), and the Raman peak ratio within a Raman spectrum obtained at the opposite side to the substrate (1).</p>
申请公布号 EP2061090(A1) 申请公布日期 2009.05.20
申请号 EP20070806421 申请日期 2007.08.30
申请人 MITSUBISHI HEAVY INDUSTRIES, LTD. 发明人 GOYA, SANEYUKI;NAKANO, YOUJI;SATAKE, KOUJI
分类号 H01L31/042;C23C16/24 主分类号 H01L31/042
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